light sourceFemtosecond Laser Amplifier (1030 nm / 515 nm, 1-200kHz)
Processing MaterialsSapphire, quartz, silicon wafer, silicon carbide, etc.
Drilled hole diameter20 μm-20mm
Device dimensions (L×W×H)600×500×800 mm
Positioning accuracy±3 μm
Sample thickness0.1 mm-3 mm
Maximum scanning speed200 mm/s
Processing file formatAeroBasic, supports STL format conversion
Electrical RequirementsAC200-240 V,50/60 Hz,5kW